? ixys all rights reserved 1 - 3 20100503a vuo 52 ixys reserves the right to change limits, test conditions and dimensions. i dav = 55 a v rrm = 800-2200 v three phase rectifer bridge features ? package with dcb ceramic base plate ? isolation voltage 3000 v~ ? planar passivated chips ? blocking voltage up to 2200 v ? low forward voltage drop ? ul registered e 72873 applications ? supplies for dc power equipment ? input rectifers for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with one screw ? space and weight savings ? improved temperature & power cycling symbol conditions maximum ratings i dav i dav i davm t c = 90c, module t a = 45c (r thka = 0.5 k/w), module module 54 43 55 a a a i fsm t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 350 375 a a t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 305 325 a a i 2 t t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 615 590 a 2 s a 2 s t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 465 445 a 2 s a 2 s t vj t vjm t stg -40...+130 130 -40...+125 c c c v isol 50/60 hz, rms t = 1 min i isol < 1 ma t = 1 s 3000 3600 v~ v~ m d mounting torque (m5) (10-32 unf) 2 - 2.5 18 - 22 nm lb.in. weight typ. 35 g v rsm/dsm v rrm/drm type v v 900 800 vuo 52-08no1 1300 1200 vuo 52-12no1 1500 1400 vuo 52-14no1 1700 1600 vuo 52-16no1 1900 1800 vuo 52-18no1 2100 2000 vuo 52-20no1 2200 2300 vuo 52-22no1 symbol conditions characteristic values i r v r = v rrm t vj = 25c t vj = t vjm 0.3 5.0 ma ma v f i f = 55 a t vj = 25c 1.46 v v t0 r t for power-loss calculations only 0.8 12.5 v mw r thjh per diode, 120 rect. per module, 120 rect. 1.5 0.25 k/w k/w d s d a a creeping distance on surface creepage distance in air max. allowable acceleration 12.7 9.4 50 mm mm m/s 2 data according to iec 60747 and refer to a single diode unless otherwise stated. 1/2 10 8 6 4/5 8 2 1 ~ 6 5 4 10
? ixys all rights reserved 2 - 3 20100503a vuo 52 ixys reserves the right to change limits, test conditions and dimensions. dimensions in mm (1 mm = 0.0394) marking on product
? ixys all rights reserved 3 - 3 20100503a vuo 52 ixys reserves the right to change limits, test conditions and dimensions. 0 1 1 100 1000 t k i 2 t i da v m i d a v m t a 2 s ms s i f s m a v f i f t s t 0. 0 0. 5 1. 0 1. 5 2. 0 2.5 0 10 20 30 40 50 60 10 - 3 10 - 2 10 - 1 10 0 0 50 100 150 200 250 300 10 - 3 10 - 2 10 - 1 10 0 10 1 10 2 0.0 0.4 0.8 1.2 1.6 a 0 2 5 5 0 7 5 10 0 12 5 150 0 1 0 2 0 3 0 4 0 50 0 40 80 120 160 200 0 2 5 5 0 7 5 10 0 12 5 150 0 10 20 30 40 50 60 t v j = 130c t v j = 25c ma x . t y p. 0.8 x v rr m 50 hz t v j = 45c t v j = 130c p to t t a 6 0.5 1 1.5 2 3 4 r t hk a k/w zth j k zth j k k/w v t v j = 45c t v j = 130c c a w a c v u o 5 2 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 3 i 2 t versus time (1-10 ms) per diode fig. 4 power dissipation versus direct output current and ambient temperature fig. 5 maximum forward current at case temperature fig. 6 transient thermal impedance per diode constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.005 0.008 2 0.2 0.05 3 0.845 0.06 4 0.45 0.3
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